The structure and alignment of epitaxial molecular-beam-epitaxy-grown single-crystal Gd2O3 films on GaAs(100) are studied using secondary electron imaging.
Atomically thin films of Gd2O3 grow on GaAs(100) in the cubic alpha-Mn2O3 structure exposing the (110) surface. The film disorders upon brief sputtering with 1000 eV Ar+ ions for 10 s.
High-resolution x-ray diffraction (HRXRD) measurements of strained-layer superlattices have been carried out using a four-crystal monochromator.
High-resolution x-ray diffraction (HRXRD) measurements of strained- layer superlattices (SLS's) have been carried out using a four- crystal monochromator.
We determined by Extended X-ray Absorption Fine Structure the interface structure in hydrogenated amorphous Si-Ge and Si- SiN sub x multilayers.
A new approach to structural studies of heterostructure interfaces will be presented using the GaAs-Ge system as a model system.
This paper reports on the effect of ion implantation on the structure of highly ordered benzene-derived graphite fibers (BDGF) using high resolution transmission electron microscopy (TEM).
We have examined the unit-cell structure of the important high- temperature and high-strength polymer, poly(p-phenylene sulfide) (PPS); this has recently been in dispute, with two different models
Sm(IO sub 3)sub 3 . H sub 2 O is polar and isomorphous with Nd(IO sub 3)sub 3 . H sub 2 O and is of potential interest for its nonlinear optic properties.
The structure of the Au segregated Ni(110)-0.8% Au surface has been studied by scanning tunneling microscopy.
