Publications

The relative abundances of medium-size clusters X sub n sup (+, -,0) of X = Si, GE, Sn or Pb, with 7 = n = 30, as prepared in various ways after vapor-phase condensation, are determined by enthalpi

Single crystals of La(2)Mo(2)0(7), prepared by fused salt *electrolysis, were used for structural and electronic characterization. La (2)mo(2)0(7) is orthorhombic with a=6.034A, b=12.236A and c=3.

While Sr sub 2 YCu sub 3 O sub 7 is not a stable phase replacement of some Cu with Al, Pb, Co, or Fe leads to stable phases of formula Sr sub 2 YCu sub (3-x) M sub x O sub 7.

The application of transient junction current and capacitance techniques to the study of imperfection in semiconductor materials is reviewed.

The application of transient junction current and capacitance techniques to the study of imperfection in semiconductor materials is reviewed.

The application of transient junction current and capacitance techniques to the study of imperfection in semiconductor materials is reviewed.

Refractive index and density have been measured for Al sub 2 O sub 3 -P sub 2 O sub 5 -SiO sub 2 near the A1PO sub 4 join down to 78% silica with ratios of A1 to P from 0.5 to 2.0.

Refractive index and density have been measured for the system Al sub 2 O sub 3 -P sub 2 O sub 5 -SiO sub 2 near the AIPO sub 4 join.

During aggregation, and assembly of oxygen atoms in silicon produces an electrically active site.

We report the synthesis, structural characterization, and preliminary optical studies of ultrathin Ge-Si superlattices with individual sublayers smaller than the Si unit cell, grown by MBE on (001)