We report for the first time growth of the highest quality films of Metastable alpha -Sn.
We have used Medium Energy Ion Scattering (MEIS) and other techniques to investigate the structure and formation mechanisms of ultrathin (less than 10 nm) layers of Ta2O5 on Si.
We study structural properties of each of the main sublanguages of commonly used in practice.
Calorimetric and Young's modulus measurements reveal that the as-spun Al(86)Mn(14) quasicrystal exhibits structural relaxation at temperatures well below the icosahedral-orthorhombic transition.
The narrow defect Raman bands found in melt-quenched vitreous silica are also observed at the same frequencies and with the same band widths in heavily 0H- and F-doped porous vitreous silica prepar
This comment compares microscopic and phenomenological surveys of structural stability of crystalline compounds.
(Sn(1-x)Tb(x))Tb(4)Rh(6)Sn(18) and (Sn(1-x)Dy(x))Dy(4)Os(6)Sn (18) belong to a large stannide series where there exist two chemical formulae : SnM(3)M'(4)Sn(12)(phase l and l") and SnM (4)M'(6)Sn(1
Epitaxial semiconductor/metal interfaces are usually studied in the transmission electron microscope (TEM) in two specimen geometries: planview and cross-section.
3D (Ga,In)/GaInP structures were grown on polycrystalline InP substrates by the MOCVD technique. The growth temperature was varied from 600 to 700degreesC.
