We report on the development of a submicron InP DHBT technology, optimized for the fabrication of ges50-GHz- clock mixed-signal ICs.
Each author will in 30-40 pages emphasize scaling limits as applied to various integrated circuit technologies.
"A Wiley-Interscience publication."
The thinning of oxides that are grown in narrow windows (0.5 mu m) or over edges and the crotch of a deep trench can be a scaling limitation and result in device problems.
A triple layer gate spacer (oxide/nitride/Peteos) CMOS (T-MOS) structure has been used to form shallow/deep junctions with deep junction self-aligned to the silicide layer on the source/drain area
A new, self-aligned process technology for AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT) has been developed, which is based upon ultra-thin (100 - 200 angstrom) AlGaAs emitter layers.
A new submicron InGaAs depletion mode MISFIT with self-aligned recessed gate structure is presented.
At the Advanced Light Source in Berkeley we have instrumented a beam line that is devoted exclusively to X-ray micro-diffraction problems.
Experiments on a-Si prepared by vapor deposition or ion bombardment exhibit anomalies which are most readily explained not by a continuous random network but by arrays of morphologically oriented
We have observed linear polarization of the submillimeter (270microns) continuum radiation from three regions in Orion: One centered on the Kleinmann-Low (KL) nebula, one centered on the 400microns
