We report on a dynamic hole-burning study of 35-45angstroms CdSe nanoclusters in solution at 300K.
We investigate the dynamics of excitonic optical absorption in room- temperature GaAs quantum wells during the application of a rapidly changing electric field in the plane of the quantum well laye
We report an improved time resolved luminescence spectroscopy system using sum frequency generation.
Passive modelocking in one-section monolithic semiconductor laser diodes based on a quantum dash active layer at very high repetition rate (> 40 GHz), in the 1.5 mu m window. is demonstrated.
We demonstrate passive mode locking in one-section monolithic semiconductor laser diodes based on quantum-dash active layer at very high repetition rate in the 1.5 mu m window.
We demonstrate ~590 fs pulse generation at a 245 GHz repetition rate using a one-section Fabry-Perot quantum-dash-based laser.
Near-transform-limited subpicosecond pulses at 1.56 mu m were generated from an optically pumped InP-based vertical-external-cavity surface-emitting laser (VECSEL) passively mode-locked at 2 GHz re
We demonstrate ~860 fs pulse generation at a 21.31 GHz repetition rate using a two-section single quantum well mode-locked laser emitting at 1.54 mum.
The reflected waveform of a femtosecond electrical pulse incident on GaAs following hot electron excitation by a subpicosecond optical pulse is calculated.
This paper describes the application of an analog VLSI vision sensor to active binocular tracking.
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