Publications

we report on a full C+L-band erbium-doped fiber amplified (EDFA) submarine transmission experiment of 178 wavelength division multiplexed channels of 49 GBd polarization multiplexed 16QAM signals,

Discusses the history of the development of the long-distance submarine telephone cable and the facilities required for its manufacture of such cable.

This article is a sequel to "submarine-Coaxial-Cable Manufacture at Southampton" by the same author, (Abstr. 11112 of 1963).

Describes submerged repeater developed for use on South East Asia Cable projects providing some 50 dB gain at 1164 kc/s. When used with 0.99 inch cable repeater spacing is 17.3 n. miles.

We describe the realization of self-aligned AlGaAs/GaAs heterostructure bipolar transistors with submicrometer emitter stripe width, current gain of 120, and a maximum operating current density gre

We report on the reliability of InP/InGaAs DHBTs used in very high speed ICs and present the analysis of HBT failure mechanisms after thermal and bias stresses (junction temperature from 87 degrees

High Electron Mobility Transistors (HEMTs) were fabricated from AlGaN/GaN layers grown by plasma-assisted Molecular Beam Epitaxy on semi-insulating 6H-SiC substrates.

High-performance and compact distributed amplifiers were realized in a 0.5 um emitter double-heterojunction InGaAs/InP HBT (D- HBT) technology with current gain cutoff frequency (fT) and maximum os

We report on the development of a submicron InP DHBT technology, optimized for the fabrication of ges50-GHz- clock mixed-signal ICs.

Each author will in 30-40 pages emphasize scaling limits as applied to various integrated circuit technologies.