Publications

Inslanding and surface diffusion for Ge on Si(111)7x7 and Si (100)2x1 surfaces were examined in a UHV apparatus with in situ scanning Auger/SEM capabilities.

The interrelation of surface diffusion and islanding has a strong influence on the growth of semiconductor heterostructures during molecular beam epitaxy (MBE).

Surface diffusion and related phenomena such as islanding play an important role during growth of strained layer structures by molecular beam epitaxy.

The interrelation of surface diffusion and islanding has a strong influence on the growth of semiconductor heterostructures during molecular beam epitaxy (MBE), affecting properties such as optimum

Portions of CO adsorbed on Ru particles, selected by the orientation of the CO bond to an external magnetic field, are labeled by inversion of the sup 13 C nuclear magnetic dipole.

19(57 When a semiconductor is exposed to nuclear radiation, two basically different effects may occur.

Observation of surface effects of ionizing radiation on several types of transistors indicates that in reverse-biased devices these effects occur at much lower radiation dosage than in unbiased dev

Objectives: The objective of this preliminary investigation was to determine if surface electromyography (EMG) equipment is capable of detecting electrical signals that can be used as a measure in

Surface electromyography (sEMG) is a non-invasive method of measuring neuromuscular potentials generated when the brain instructs the body to perform both fine and coarse locomotion.

Surface emitting lasers have emerged as a useful architecture for numerous applications.