Publications

The effect of surface polarity on the growth of Mg-doped GaN thin films on c-plane sapphire substrates by molecular-beam epitaxy has been investigated.

I got started in positron physics as an undergraduate working with Martin Deutsch. I first came to visit Brandeis at about the same time that Steve came here.

n- and p-type GaN epitaxial layers grown by metal-organic chemical vapor deposition with different doping levels have been characterized by Kelvin probe force microscopy (KFM).

Every one is familiar with the fact that it is necessary to expend energy to remove an electron from a conducting solid. This energy is * Bell Telephone Laboratories. t University of Illinois.

Various dielectric and metallic films were examined as H-permeable surface protection layers on InP during H sub 2 or D sub 2 plasma exposure for passivation of acceptors in the InP.

In our studies of the deposition of aluminum films by triisobutylaluminum (TIBA) pyrolysis on clean and oxidized Si(111) (7x7), Si(100) (2x1), an evaporated aluminum film on silicon, and Al(111) su

The surface reconstructions that result from the adsorption of Te on (100) GaAs have been shown to affect the orientation of CdTe films on GaAs. Two reconstructions are described here.

Using diffraction of visible light, we have observed a complex phase diagram of surface reconstruction on the 111> face of 3D FCC colloidal crystals near clean glass surfaces.

We discuss surface reconstruction preserving discontinuities. Given a set of function values, we first detect discontinuities. Then we construct a surface that preserves discontinuities.

New dielectric materials have been introduced for printed circuit board applications, such as Thermount and polyimide with the aim to match the requirements for high speed and high density of elect