Publications

An (001) surface of an Fe 1.7 at % Sn single crystal enriched in Sn due to segregation from the bulk has been studied using Low Energy Ion Scattering (LEIS), Low Energy Electron Diffraction (LEED),

The surface structure of Ge(100) has been studied using the technique of He diffraction.

Extended x-ray absorption fine structure (EXAFS). Since EXAFS is an impurity-based structural probe, only foreign atoms not present in the semiconductor substrate can be studied.

The surface structure of single crystal, epitaxial, thin film, CoSi sub 2 on Si(111) substrates has been studied by low energy electron diffraction, Auger electron spectroscopy, Rutherford backscat

It is shown that the photoemission spectrum of the 4f core levels obtained from a clean W(111) surface contains only three experimentally resolvable components, rather than four as recently claimed

Temperature and surface-coverage dependence of the evolution of surface morphology during growth-interrupt in situ annealing on GaAs epitaxial layers grown on the singular (110) cleaved edges by th

A method is proposed to realize cavity resonator filters for cellular frequencies in surface-mount technology.

We report the demonstration of surface-plasmon microcylinder quantum cascade lasers with circular and deformed resonators.

A transition is investigated which couples waveguide on one substrate (a motherboard) to coplanar waveguide on another substrate surface (a semiconductor chip or subarray) placed above the first.

We presented the radiation properties of a dielectric-loaded rectangular waveguide array in some detail in a previous paper 1 for two planes of scanning: the H plane and a quasi-E plane. (See Fig.