Publications

Sabine, Eyring, and others derived approximate formulas for the reverberation time of sound dying out in a room.

We report on deep ion-implantation of sulfur into InP substrates to replace the epitaxial subcollector layer of double-heterojunction bipolar transistors.

The growth of strained layer epitaxial films and compositionally modulated superlattices is the driving force for much of current day materials science and technology.

The behavior of boron incorporation into GaAs has been studied by x-ray photoelectron spectroscopy, x-ray diffraction, and atomic force microscopy.

The surface segregation of Ni(110)-0.8%Au has been studied by Scanning Tunneling Microscope (STM).

A newly developed focusing-type time-of-flight atom-probe (field ion microscope) was applied for the detailed investigation of surface segregation in Ni-Cu binary alloys over the entire composition

An introduction to the basic concepts of grazing incidence x-ray scattering is presented in this paper.

Electronic structure calculations for a clean Cr(001) film and for Cr(001) film and for Cr(001) films covered with Au, Pt or Ir monolayers predict a surface band localized on the outer Cr layer ne

The current experimental situation concerning the existence of surface states on copper surfaces, their energy dispersion relations, and photon energy dependent intensity are reviewed and compare

A transition from the high-temperature body-centered cubic to the low-temperature triclinic structure at the surface of crystalline Al3Pd has been observed with secondary-electron imaging.