Dynamic and static characteristics of high-speed 1.55- and 1-mu m wavelength tunneling injection quantum-well lasers and 1-mu m wavelength self-organized quantum-dot lasers, have been measured as a
The temperature dependence of the dynamic performances of p-doped InAs/GaAs quantum dot DFB lasers emitting at 1.3 µm is investigated.
We report the temperature dependence of the channel resistance in three high mobility GaAs-Al(x)Ga(1-x) heterostructures between 1 and 10K.
The temperature dependence of reverse breakdown voltage (V-RB) and forward turn-on voltage (V-F) of GaN Schottky diode rectifiers is reported.
The formation of hydroxyl due to reaction of silica glass made by the modified chemical vapor deposition (MCVD) process with hydrogen has been studied for temperatures between 200C and 900C.
Theoretical calculations of metal-oxide semiconductor (MOS) capacitance show a total capacitance approaching oxide capacitance in strong accumulation and strong inversion.
We report on the temperature dependence of microwave-induced resistance oscillations in high-mobility two-dimensional electron systems.
Device-quality Ga2O3(Gd2O3) thin films have been grown on GaAs using molecular-beam epitaxy. Photoluminescence measurements have been performed within a temperature range of 4.2-300 K.
We present measurements of the temperature dependence of the conductance of a tunnel junction of the form Al/oxide/disordered granular Ag film at low temperatures.
Low-OH-content silica samples having fictive temperatures in the interval 1000-1500degreesC, have been studied by small-angle X-ray scattering using synchrotron radiations both at room temperature
