Publications

We report high precision measurements of the temperature dependence of the quantum Hall resistance for two GaAs heterostructures.

We report the measurements of second harmonic distortion at different temperatures for distributed feedback single wavelength lasers.

Static fatigue (log t = -nlog sigma + log K) of fused silica fiber shows a transition in slope (n) which departs significantly from the usually assumed linear dependence.

We report measurements of the temperature dependence of the threshold current of GaAs, 1.3micron InGaAsP and 1.5micron InGaAsP double heterostructure lasers using short electrical pulses.

This work is a study of the degradation of AlGaN/GaN HEMTs generated by different ageing tests. The methodology is based on cross-characterisation analyses.

We report the stress as function of temperature of films of undoped and doped silicon oxide.

The temperature dependence of microwave properties-relaxation frequency and Henry factor-of undoped and p-type doped ten InAs/GaAs quantum-dot layer lasers is reported in the 20-80 degrees C range.

In an optical code division multiplexed system digital baseband and subcarrier signals have bt en simultaneously transmitted over the same fibre using spectrally encoded LEDs.

Performance and reliability of a high power amplifier are correlated with its thermal behavior.

The local temperature of quantum-cascade lasers operating in continuous wave mode is reported.