Publications

We report the temperature dependence of the channel resistance in three high mobility GaAs-Al(x)Ga(1-x) heterostructures between 1 and 10K.

The temperature dependence of reverse breakdown voltage (V-RB) and forward turn-on voltage (V-F) of GaN Schottky diode rectifiers is reported.

The formation of hydroxyl due to reaction of silica glass made by the modified chemical vapor deposition (MCVD) process with hydrogen has been studied for temperatures between 200C and 900C.

Theoretical calculations of metal-oxide semiconductor (MOS) capacitance show a total capacitance approaching oxide capacitance in strong accumulation and strong inversion.

We report on the temperature dependence of microwave-induced resistance oscillations in high-mobility two-dimensional electron systems.

Device-quality Ga2O3(Gd2O3) thin films have been grown on GaAs using molecular-beam epitaxy. Photoluminescence measurements have been performed within a temperature range of 4.2-300 K.

We present measurements of the temperature dependence of the conductance of a tunnel junction of the form Al/oxide/disordered granular Ag film at low temperatures.

Low-OH-content silica samples having fictive temperatures in the interval 1000-1500degreesC, have been studied by small-angle X-ray scattering using synchrotron radiations both at room temperature

Using powder x-ray diffraction, we have measured the temperature dependence of the lattice parameters of the 30K superconductor, Ba sub (0.6) K sub (0.4) BiO sub 3, in the range 14-300K.

Transverse-field Muon Spin Relaxation (mu SR) measurements have been performed on Ba sub 2 YCu sub 3 O sub (9-delta) (delta = 2.1 +- 0.05) above and below its superconducting transition temperature