This paper presents a characterization method of traps in GaN HEMTs, based on the frequency dispersion of the output-admittance characterized by low-frequency S-parameter measurements.
A theory for electronic excitation transport in inhomogenous systems is developed that will allow trap fluorescence experiments to be used to probe interfacial structure in phase separated binary p
A technique to trap and separate particle of different dipole moment using a hexapole potential is presented.
We have trapped a gas of long-lifetime, high-mobility excitons in an in-plane harmonic potential.
Current-voltage characteristics of single- and poly-crystalline organic field-effect transistors are analyzed. The effect of bulk, interface, and grain boundary traps is investigated.
We report an important step forward for the goal of unambiguous observation of Bose-Einstein condensation of excitons in semiconductors.
Liquid-phase non-equilibrium segregation and trapping of Au in Si induced by Q-switched laser irradiation is reported.
Microstructural studies of Si-Si interfaces grown by Molecular Beam Epitaxy reveal pockets of oxygen-rich material for certain substrate preparation conditions.
We evaluate the asymptotic, normalized distributions of trapping sets in random, irregular, binary low-density parity-check (LDPC) code ensembles, by using large deviation theory and statistical m
Two typical magnetic impulse events (MIEs) accompanied by traveling convection vortices (TCVs) are investigated.
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