Publications

Copyright, 1955, American Telephone and Telegraph Company Transport Properties of a Many-Valley Semiconductor By CONYERS HERRING (Manuscript received December 16, 1954) The simple model of a semico

The results of transport measurements on beta-Fe1-xMnxSi2 alloys in the temperature range of 80 to 300 It are presented and explained assuming the existence of an impurity band.

The temperature dependence of the Hall coefficient in p-type Cr-doped beta -FeSi2 films and single crystals is analyzed within the framework of a simple model of a semiconductor with two types of c

Hall effect, electrical conductivity, and charge carrier mobility of n-type CuGaSe2 single crystals are studied in the temperature range between 2 and 300 K.

A general description of the electrical properties of thin films, bulk ceramics and crystals of mainly YBa sub 2 Cu sub 3 O sub 7, both below and above T sub c, will be presented in this talk.

Tl-based superconducting oxides have been fabricated by a novel liquid-gas solidification (LGS) process. The resultant oxides exhibit onset temperature of 120K and zero-resistance above 113K.

Traffic matrices play a crucial role in designing, dimensioning, and evolving communication networks.

The current-voltage relations for the barrier regions in the SCH quantum well laser diode are derived in general terms under the assumption of charge neutrality.

We have measured the temperature-dependent resistivities of a series of samples of La sub (2-x) Sr sub x CuO sub 4 with 0.02 = x = 0.1 over the temperature range 0.05 K = T = 300 K.

A transport system has been built whereby a printed wiring board (PWB) panel, 22 by 30 cm (9" by 12") in size and up to 3 mm (0.12") thick, is moved in a vacuum deposition system at speeds of 1.5