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Resistivities rho(T) of ceramic samples of La sub 1.825 Sr sub 0.175 CuO sub 4 (LSCO) and both ceramic and single-crystalline (a-b plane, containing micro- twins) samples of YBa sub 2 Cu sub 3 O su

In this work we propose the use of porous flow theory to predict the behavior of the fully-developed inertia-less flow of a constant viscosity Newtonian fluid in a parallel-plate, superhydrophobic

At low temperatures and high magnetic fields the carriers of two-dimensional electron systems condense into a novel quantum fluid at rational Landau level filling nu = p/q.

We have successfully measured the electrical resistance of Ba-K-Bi-O as a function of temperature and magnetic field, and thus confirmed the existence of superconductivity in the compound by transp

We propose and evaluate several transport mechanisms to support User Element mobility at the optical layer in a next-generation (e.g., LTE-A) mobile backhaul network implemented using our previousl

We propose and evaluate several transport mechanisms to support User Element mobility at the optical layer in a next-generation (e.g., LTE-A) mobile backhaul network implemented using our previousl

The evolution of LTE and advent of 5G networks increases further the bandwidth requirements for Radio Access Network (RAN).

The evolution of LTE and advent of 5G networks increases further the bandwidth requirements for RAN.

Scaling analysis and finite element modeling of the governing transport equations are used to show that in the submicron features of damascene ultralarge scale integrated interconnect structures, d

The current-voltage characteristics of the Ni/InAlN/GaN Schottky diodes were measured at various temperatures in the range of 300-820 K.

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