Scaling analysis and finite element modeling of the governing transport equations are used to show that in the submicron features of damascene ultralarge scale integrated interconnect structures, d
The current-voltage characteristics of the Ni/InAlN/GaN Schottky diodes were measured at various temperatures in the range of 300-820 K.
Copyright, 1955, American Telephone and Telegraph Company Transport Properties of a Many-Valley Semiconductor By CONYERS HERRING (Manuscript received December 16, 1954) The simple model of a semico
The results of transport measurements on beta-Fe1-xMnxSi2 alloys in the temperature range of 80 to 300 It are presented and explained assuming the existence of an impurity band.
The temperature dependence of the Hall coefficient in p-type Cr-doped beta -FeSi2 films and single crystals is analyzed within the framework of a simple model of a semiconductor with two types of c
Hall effect, electrical conductivity, and charge carrier mobility of n-type CuGaSe2 single crystals are studied in the temperature range between 2 and 300 K.
A general description of the electrical properties of thin films, bulk ceramics and crystals of mainly YBa sub 2 Cu sub 3 O sub 7, both below and above T sub c, will be presented in this talk.
Tl-based superconducting oxides have been fabricated by a novel liquid-gas solidification (LGS) process. The resultant oxides exhibit onset temperature of 120K and zero-resistance above 113K.
Traffic matrices play a crucial role in designing, dimensioning, and evolving communication networks.
The current-voltage relations for the barrier regions in the SCH quantum well laser diode are derived in general terms under the assumption of charge neutrality.
