As silicon-based transistors in integrated circuits grow smaller, the concentration of charge carriers generated by the introduction of impurity dopant atoms must steadily increase.
Oyxgen vacancies can act as n-type dopants in SrTiO3, allowing carrier mobilities in excess of 104 cm2/(Vs) at low temperatures.
The first quantitative measurements of solute segregation at ceramic/metal (C/M) heterophase interfaces are presented for the MgO/Cu (Ag) and CdO/Ag (Au) systems.
It is now common to claim the fabrication of heterofaces, which are atomically flat over distance in the micron range.
The dimensional and electrical features of current Si devices require high dose and very low energy implants, which cause amorphization in the regions of high dopant concentration.
We discuss atomistic simulations of ion implantation and annealing of Si over a wide range of ion dose and substrate temperatures.
Metal lines for electrical connections in Si devices are deposited in the form of blanket films of conducting metals, generally Al or Cu.
Slow structural relaxation ({''}aging{''}) observed in many atomic, molecular, and polymeric glasses substantially alters their stress-strain relations and can produce a distinctive yield point.
In this paper, we review the principles and the applications of an atomistic simulator for thin film deposition (ADEPT), which is a hybrid of classical molecular dynamics and lattice Monte Carlo me
The behavior of atoms and electrons is modified by the presence of intense radiation fields.
