We have recently reported non-adiabatic excitations at single crystal surfaces due to hyperthermal atomic collisions. These include e-h sup + excitations and ion emission.
Separate implants of 46 elements into crystalline Si have been SIMS analyzed with a Cameca IMS-3F to determine relative ion yields for atomic and molecular ions.
No abstract provided.
We report observations of atomic carbon (C I {[}P-3(1) --> P-3(0)]) for a sample of 49 southern hemisphere H II regions using the Antarctic Submillimeter Telescope and Remote Observatory.
An analytical nonperturbative theory of a two-mode laser with coupled transitions is presented. The gain medium is modeled as a homogeneously broadened A-type three-level system.
The thermal dependence coefficient of ionic displacement in ZnO between 20 and 900K is 0.263(8)x10 sup (-4) A K sup (-1).
We report first-principles calculations in terms of which we propose a unified description of the atomic dynamics that underlie the nucleation and growth of SiO2 precipitates in Si and the oxidatio
T h e removal of surface oxides is an important step in the manufacture of electron devices.
We report the first evidence of lattice mismatch stain induced atomic reordering within a single crystalline epilayer in a film-substrate structure.
We have examined the interfaces in Zr-silicate gate dielectrics grown on Si substrates using electron energy loss spectroscopy.
