An analytical nonperturbative theory of a two-mode laser with coupled transitions is presented. The gain medium is modeled as a homogeneously broadened A-type three-level system.
The thermal dependence coefficient of ionic displacement in ZnO between 20 and 900K is 0.263(8)x10 sup (-4) A K sup (-1).
We report first-principles calculations in terms of which we propose a unified description of the atomic dynamics that underlie the nucleation and growth of SiO2 precipitates in Si and the oxidatio
T h e removal of surface oxides is an important step in the manufacture of electron devices.
We report the first evidence of lattice mismatch stain induced atomic reordering within a single crystalline epilayer in a film-substrate structure.
We have examined the interfaces in Zr-silicate gate dielectrics grown on Si substrates using electron energy loss spectroscopy.
The atomic scale oxidation of the alpha-SiC(0001)3x3 surface is investigated by atom-resolved scanning tunneling microscopy, synchrotron-based core level photoemission spectroscopy and high-sensiti
Using high-resolution transmission electron microscopy we have studied atomic structure of interfaces between epitaxial thin films of metals, insulators or semiconductors on semiconductors.
There is a renewed interest in the investigations of chemisorption of Cu surfaces in an attempt to understand the formation of the Cu oxide.
An oxide-free heteroepitaxial bonding of InP-clad GaInAs quantum wells on Si showing an atomic-plane-thick reconstruction across the InP-Si interface and no degradation of the quantum wells lumines
