The atomic scale oxidation of the alpha-SiC(0001)3x3 surface is investigated by atom-resolved scanning tunneling microscopy, synchrotron-based core level photoemission spectroscopy and high-sensiti
Using high-resolution transmission electron microscopy we have studied atomic structure of interfaces between epitaxial thin films of metals, insulators or semiconductors on semiconductors.
There is a renewed interest in the investigations of chemisorption of Cu surfaces in an attempt to understand the formation of the Cu oxide.
An oxide-free heteroepitaxial bonding of InP-clad GaInAs quantum wells on Si showing an atomic-plane-thick reconstruction across the InP-Si interface and no degradation of the quantum wells lumines
As silicon-based transistors in integrated circuits grow smaller, the concentration of charge carriers generated by the introduction of impurity dopant atoms must steadily increase.
Oyxgen vacancies can act as n-type dopants in SrTiO3, allowing carrier mobilities in excess of 104 cm2/(Vs) at low temperatures.
The first quantitative measurements of solute segregation at ceramic/metal (C/M) heterophase interfaces are presented for the MgO/Cu (Ag) and CdO/Ag (Au) systems.
It is now common to claim the fabrication of heterofaces, which are atomically flat over distance in the micron range.
The dimensional and electrical features of current Si devices require high dose and very low energy implants, which cause amorphization in the regions of high dopant concentration.
We discuss atomistic simulations of ion implantation and annealing of Si over a wide range of ion dose and substrate temperatures.
