Metal lines for electrical connections in Si devices are deposited in the form of blanket films of conducting metals, generally Al or Cu.
Slow structural relaxation ({''}aging{''}) observed in many atomic, molecular, and polymeric glasses substantially alters their stress-strain relations and can produce a distinctive yield point.
In this paper, we review the principles and the applications of an atomistic simulator for thin film deposition (ADEPT), which is a hybrid of classical molecular dynamics and lattice Monte Carlo me
The behavior of atoms and electrons is modified by the presence of intense radiation fields.
The electric field strength in a tightly focused high-powered laser beam can approach an atomic unit.
Enabled by the seemingly never-ending progress of silicon technology, the scope of the task of developing an IC has been broadening-orders of magnitude beyond that which worried industry leaders in
We describe the resonant interaction of an atom with a strongly focused light beam by expanding the field in multipole waves.
Attachement reliability was identified early as an impediment to the full realization of the predicted board real estate benefits of Chip Scale packages (CSP).
Long-term solder attachment reliability for Surface Mount (SM) components is established through accelerated thermal cycling of test vehicles.
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