Previously we have presented calculations of synchrotron radiation emission in the infra-red region which have shown it to be two or three orders of magnitude brighter than a black body source.
High acceleration voltage electron beam exposure is one of the possible candidates for post optical lithography, where tighter resolution and wide process latitude is required.
It has been shown by Thomas 1 that under certain conditions the field over the aperture of a corrugated feed is virtually constant over a very wide frequency range.
Stationary characteristics (such as laser frequency at threshold, light-intensity curve, etc.) and relative intensity noise of laser diodes coupled with an external Bragg reflector are studied for
We demonstrate the operation of a semiconductor laser pumped fiber Brillouin amplifier. An optical gain of 5.5 dB/mW of pump power is obtained.
InAlN/GaN is a new heterostructure system for HEMTs with thin barrier layers and high channel current densities well above 1 A/mm.
Summary form only given. All-optical re-amplification and re-shaping (2R) is a key technology that enables long distance transmission of high-bit-rate data.
Electronic and photonic device applications of the InP/InGaAs semiconductor materials system requiring the growth of epitaxial material doped to or near the saturation limit of the impurity in the
Thin SOI films on SiO sub 2 produced by melting and recrystallization of poly-silicon in a traveling-strip-heater furnace have been characterized.
Growth of a single crystal was found in the first few oxide layers on GaAs(100) substrate, electron beam evaporated from a Ga5Gd3O12 source.
