Traps are characterized in AlGaN-GaN HEMTs by means of DLTS techniques and the associated charge/discharge behavior is interpreted with the aid of numerical device simulations.
Red emission at 621 nm from the D-5(0) --> F-7(2) transition of Eu+3 has been obtained from GaN:Eu grown by gas-source molecular beam epitaxy.
The use of non-metallic faceplates for circuit-packs popu- lating an equipment shelf can impact both the Emissions and Immunity characteristics of a system to stimuli with transient and/or steady-s
A two degree of freedom velocity amplified electromagnetic energy harvester has been taken in consideration.
An overview of the various growth techniques which have been used to grow thin film high temperature superconductors will be given.
The thickness of silicon dioxide that is used as the transistor gate dielectric in most advanced memory and logic applications has decreased below 7 nm.
Novel pressure-coring technology, along with nuclear magnetic resonance (NMR) spectrometry and X-ray computed tomography (CT) of cores retrieved from scientific drillhole SB-15-D in the Sulphur Ban
This paper has two main axis: first, the low frequency noise characteristics of InGaP/GaAs HBT are investigated for the 100 Hz to 10 MHz frequency range and the temperature range of 300°K to 375°K
A graph G is called an s-stage graph if the set of vertices can be partitioned into s disjoint subsets Vh · · · , Vs, and the set of edges partitioned into s -- 1 disjoint subsets E, · · ·, Es-i, s
The measured characteristics of a high speed 256K x 1 Radiation Hard SRAM fabricated in 1.0micron CMOS technology will be discussed.
