Summary form only given. GaAsSb/GaAs quantum wells grown on GaAs substrates are a potential active material for the monolithic growth of 1.3 μm VCSELs.
High concentrations (3-5 at. %) of Fe were incorporated into p-GaN by direct implantation at elevated substrate temperature (350 degreesC).
The background carrier concentration of undoped VPE-grown In (1-x)Ga(x)As/InP has been found to correlate to the x-ray linewidth.
We have investigated two In sub (1-x) G sub (ax) As sub y P sub (1-y)/InP p-i-n multiple quantum (MQW) solar cell structures (with and without gold contacts) with intrinsic (i)-InP spacers and two
Metal-Insulator-Semiconductor Tunneling Microscopy is a new technique for creating a 2 dimensional map of the carrier concentration in a semiconductor.
The purpose of this effort was to characterize statistically and experimentally the interfacial adhesion damage of generic dual in-line packages (DIP's) exposed to accelerated stress conditions.
DTA can successfully measure T(c) and hence the Li content for samples over most of the single phase range of LiNbO3.
Indium alloyed GaAs crystals are analyzed quantitatively for indium by non-destructive 14 MeV neutron activation analysis.
We propose to use digital holography to characterize long multi-mode fiber links.
To address performance limitations of conventional thermal interface materials (TIMs), a metal micro-textured thermal interface material (MMT-TIM) has been developed that consists of a thin metal f
