The demand for bandwidth generally creates an increased demand for network capacity.
A non-destructive microwave photoconductance technique has been employed to investigate the uniformity of electrical transport properties in semi-insulating, doped or implanted GaAs.
We studied undoped GaAs films grown by metal organic chemical vapor deposition in a vertical geometry atmospheric pressure reactor.
Epitaxial GaAs layers were grown by Metal Organic Chemical Vapor Deposition on Si-on-insulator structures formed by high dose oxygen implantation.
Summary form only given. GaAsSb/GaAs quantum wells grown on GaAs substrates are a potential active material for the monolithic growth of 1.3 μm VCSELs.
High concentrations (3-5 at. %) of Fe were incorporated into p-GaN by direct implantation at elevated substrate temperature (350 degreesC).
The background carrier concentration of undoped VPE-grown In (1-x)Ga(x)As/InP has been found to correlate to the x-ray linewidth.
We have investigated two In sub (1-x) G sub (ax) As sub y P sub (1-y)/InP p-i-n multiple quantum (MQW) solar cell structures (with and without gold contacts) with intrinsic (i)-InP spacers and two
Metal-Insulator-Semiconductor Tunneling Microscopy is a new technique for creating a 2 dimensional map of the carrier concentration in a semiconductor.
The purpose of this effort was to characterize statistically and experimentally the interfacial adhesion damage of generic dual in-line packages (DIP's) exposed to accelerated stress conditions.
