Displaying 7241 - 7250 of 37942

The output energy (90microJ), focal spot diameter (235microns) and pointing accuracy (+/-75micro rad) of the Se soft-x-ray laser operating at 20.6 and 20.9 nm are reported.

The frequency response of an InGaAs PIN photodiode and the ratio of the frequency modulation (FM) and intensity modulation (IM) index of a 1.5micron InGaAsP DFB-VPT laser diode have been measured b

We measure the impact of optical nonlinear effects on polarization-multiplexed coherent channels at 40 Gb/s, possibly surrounded by legacy channels at 10 Gb/s.

We have previously demonstrated a monolithically integrated receiver OEIC (Opto Electronic Integrated Circuit) for long wavelength (1.3 um to 1.55 um) optical communications.

The molecular parameters that govern charge transport in anthradithiophene (ADT) are studied by a joint experimental/theoretical approach involving high-resolution gas-phase photoelectron spectrosc

Licensee MDPI, Basel, Switzerland. A new implementation of a beam-steering transmitarray is proposed based on the tiled array architecture.

Germanium-doped silica soot particles from the Vapor Phase Axial Deposition (VAD) process were taken from unconsolidated light-guide preform boules and characterized by infrared spectroscopy, light

Oxygen-containing plasma are used to deposit SiO sub 2 and to etch recently developed organic, low dielectric constant (low-k) materials.

Experimental measurements and physical modeling of the tunneling current through ultra-thin gate oxides (1-6 nm) are presented for a large variety of experimental conditions including injection of

Ultrathin epitaxial CoSi sub 2 films on Si(111) have been grown in ultrahigh vacuum by room temperature deposition of Co on Si(111) followed by a high temperature anneal at ~600C.