Chemical beam epitaxy (CBE) is the newest development in epitaxial growth technology.
In0.53Ga0.47As lattice-matched to InP substrate has been grown by the newly developed chemical beam epitaxy (CBE) using trimethylinduim and triethylgalluim as the group III sources and trimethyla
A new epitaxial growth technique: The Chemical Beam Epitaxy (CBE) was demonstrated and investigated with growth of InP and GaAs.
This is to be published as a chapter in a book volume by Academic Press, "Beam Processing Technologies" edited by N.G. Einspruch, S.S. Cohen and R.N. Singh.
The insensitivity of experimentally observed Schottky barrier heights (SBH) to the metal work function is known as Fermi level pinning.
Revised heats of formation are summarized for the above compounds and their significance in terms of charge-transfer and lone- pair contributions to chemical bonding is discussed.
This paper will appear in a forthcoming thematic issue of Chemical Reviews on gas-phase clusters X(n) (5>=n=1000).
The deposition of II-VI semiconductor compounds using organometalic source materials has developed rapidly during the last few years.
The interaction of vapor deposited Al atoms with self-assembled monolayers (SAMs) of HS(CH sub 2) sub (15) CH sub 3 and HS(CH sub 2) sub (15) CO sub 2 CH sub 3 chemisorbed at Au(111) surfaces was s
The character of American industry and society has changed dramatically over the past three decades as we have entered the "information age".
