Stuck-at faults on primary inputs and fanout branches are commonly used as target faults in test generation algorithms for combinational circuits.
The synthesis of macrocyclic ligands(3, 4, and 7) for alkyltin trichloride (RSnCl3) encapsulation is described.
Chem is intended to make it possible for chemists to include structure diagrams in their manuscripts with the same ease that they can include tables or mathematics.
The reliable trace characterization of electronic gases and volatile chemicals for device processing presents new challenges in trace analysis.
X-ray photoemission and in-situ oxygen uptake studies have been performed on polyimide surfaces exposed to controlled ion etching, reactive metallization, or the two acting in concert.
High quality GaAs layers have been grown by chemical beam epitaxy using triethylgallium and arsine.
Full widths at half-maximum intensity of the (004) Bragg reflection peak as small as 24 arcs are obtained from InGaAs epilayers of 4-6 micrometer thick.
We report the growth study of InAs by chemical beam epitaxy.
We report the successful preparation by chemical beam epitaxy (CBE) and performance characteristics of Ga(0.47)In(0.53)As/InP double-heterostructure (DH) and multiquantum well (MQW) lasers emitting
The epitaxial growth and characterization of high quality GaAs using triethylgallium and arsine in the MBE system is efficiency of arsine, V/III ratio, and the growth temperature.
