Aluminum gallium nitride alloys were grown by molecular beam epitaxy and their film composition, structure, and microstructure were investigated by Rutherford backscattering spectroscopy, atomic fo
The microscopic surfaces of small silicon clusters offer a model for studying chemistry at highly reactive silicon centers.
A combination of two-atom and three-atom potential energy functions has been identified that successfully represents the structural chemistry of elemental sulfur.
Using our thermodynamic force field previously developed to fit the equations of state of bulk Si phases and average coordination numbers of small Si sub n clusters (n = 3-10), we have calculated t
Historically, process control in factory environments has been dominated by tests performed on the product of the process or group of processes.
The shapes and energies of peaks in the Auger spectra of many elements depend upon the chemical state of that element.
This paper describes a technique for studying refractive index changes in a glass surface using a prism coupling method.
High temperature (strong coupling) superconductors and ferroelectrics are completely localized on Villars global quantum structural diagrams.
The growth of III-V compound semiconductors by chemical vapor deposition (CVD) was first demonstrated twenty-five years ago.
The deposition of Co thin films by organometallic chemical vapor deposition is reported.
