The growth of high purity GaAs by chemical beam using triethylgallium and arsine is reported.
An interference mirror for use near 1.55 micron wavelength was constructed using InP and lattice matched InGaAsP on an InP substrate with chemical beam epitaxy methods.
Chemical beam epitaxy (CBE) combines many important advantages of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MO_CVD).
Chemical beam epitaxy (CBE) combines many important advantages of molecular beam epitaxy (MBE) and organometallic chemical vapor deposition (OMCVD).
Chemical beam epitaxy (CBE) is the newest development in epitaxial growth technology.
In0.53Ga0.47As lattice-matched to InP substrate has been grown by the newly developed chemical beam epitaxy (CBE) using trimethylinduim and triethylgalluim as the group III sources and trimethyla
A new epitaxial growth technique: The Chemical Beam Epitaxy (CBE) was demonstrated and investigated with growth of InP and GaAs.
This is to be published as a chapter in a book volume by Academic Press, "Beam Processing Technologies" edited by N.G. Einspruch, S.S. Cohen and R.N. Singh.
The insensitivity of experimentally observed Schottky barrier heights (SBH) to the metal work function is known as Fermi level pinning.
Revised heats of formation are summarized for the above compounds and their significance in terms of charge-transfer and lone- pair contributions to chemical bonding is discussed.
