Many processes of industrial, commercial, historical, or geophysical interest involve the interaction of the atmosphere with metals and their oxides.
The effort of Wagner1 and his school to bring defects in solids into the domain of chemical reactants has provided a framework within which various abstruse statistical phenomena can be viewed in t
We combine chemical lattice imaging with digital pattern recognition to map, at near-atomic resolution, the compositional change across GaAs/AlGaAs interfaces of the highest optical quality.
Organic materials offer new electronic functionality not available in inorganic devices.
Aluminum gallium nitride alloys were grown by molecular beam epitaxy and their film composition, structure, and microstructure were investigated by Rutherford backscattering spectroscopy, atomic fo
The microscopic surfaces of small silicon clusters offer a model for studying chemistry at highly reactive silicon centers.
A combination of two-atom and three-atom potential energy functions has been identified that successfully represents the structural chemistry of elemental sulfur.
Using our thermodynamic force field previously developed to fit the equations of state of bulk Si phases and average coordination numbers of small Si sub n clusters (n = 3-10), we have calculated t
Historically, process control in factory environments has been dominated by tests performed on the product of the process or group of processes.
The shapes and energies of peaks in the Auger spectra of many elements depend upon the chemical state of that element.
