Full widths at half-maximum intensity of the (004) Bragg reflection peak as small as 24 arcs are obtained from InGaAs epilayers of 4-6 micrometer thick.
We report the growth study of InAs by chemical beam epitaxy.
We report the successful preparation by chemical beam epitaxy (CBE) and performance characteristics of Ga(0.47)In(0.53)As/InP double-heterostructure (DH) and multiquantum well (MQW) lasers emitting
The epitaxial growth and characterization of high quality GaAs using triethylgallium and arsine in the MBE system is efficiency of arsine, V/III ratio, and the growth temperature.
The growth of high purity GaAs by chemical beam using triethylgallium and arsine is reported.
An interference mirror for use near 1.55 micron wavelength was constructed using InP and lattice matched InGaAsP on an InP substrate with chemical beam epitaxy methods.
Chemical beam epitaxy (CBE) combines many important advantages of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MO_CVD).
Chemical beam epitaxy (CBE) combines many important advantages of molecular beam epitaxy (MBE) and organometallic chemical vapor deposition (OMCVD).
Chemical beam epitaxy (CBE) is the newest development in epitaxial growth technology.
In0.53Ga0.47As lattice-matched to InP substrate has been grown by the newly developed chemical beam epitaxy (CBE) using trimethylinduim and triethylgalluim as the group III sources and trimethyla
