The deoxygenation of the gallium solvent by small additions of Ti or Zr in the liquid phase epitaxial (LPE) growth of GaAs was studied using an in-situ electrochemical measurement technique.
Chromatic dispersion is characterized using temporally-gated amplified spontaneous emission.
We present a characterization technique for coupled space-division multiplexed (SDM) amplifiers, that can measure the complex transfer matrix over the whole wavelength range of interest of an ampli
We consider a K-user Interference Channel where each transmitter is interested in conveying a message to its corresponding receiver.
The demand for bandwidth generally creates an increased demand for network capacity.
A non-destructive microwave photoconductance technique has been employed to investigate the uniformity of electrical transport properties in semi-insulating, doped or implanted GaAs.
We studied undoped GaAs films grown by metal organic chemical vapor deposition in a vertical geometry atmospheric pressure reactor.
Epitaxial GaAs layers were grown by Metal Organic Chemical Vapor Deposition on Si-on-insulator structures formed by high dose oxygen implantation.
Summary form only given. GaAsSb/GaAs quantum wells grown on GaAs substrates are a potential active material for the monolithic growth of 1.3 μm VCSELs.
High concentrations (3-5 at. %) of Fe were incorporated into p-GaN by direct implantation at elevated substrate temperature (350 degreesC).
