Advances in GaAs Mosfets Using Ga sub 2 O sub 3 (Gd sub 2 O sub 3) As Gate Oxide

The GaAs metal-oxide semiconductor field effect transistors (MOSEFTs) potentially have great advantage over Si-based MOSFETs for high-speed low-power logic integrated circuits (ICs) and monolithic microwave integrated circuits (MMICs). However, the drain current drift and hysteresis hinder the success of GaAs MOSFETs due to the difficulty in fabricating an insulating film with insignificant bulk trap charges and a low interfacial density of states on GaAs. In this talk, we review the recent progress on GaAs MOSFETs using in-situ MBE-grown Ga sub 2 O sub 3 (Gd sub 2 O sub 3) as the gate dielectric. Both depletion-mode and inversion-mode GaAs MOSFETs with negligible drain current drift and hysteresis will be presented. The absence of drain current drill and hysteresis indicates that the excellent stability of the oxide and low oxide/GaAs interface state density have been achieved.