AlGaInAs Selective Area Growth for high-speed EAM-based PIC Sources
19 May 2013
We present a generic integration platform based on the SAG of AlGaInAs/InP MQW material. For efficient bandgap engineering of the different areas of the PICs, active and passive function heterostructures are precisely modeled and charac-terized in the SAG zones. This approach has allowed to design novel high-speed InP-based PIC.