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    Analysis of MBE Grown Al sub (x) Ga sub (1-x) As-GaAs Heteroepitaxial Layers by Rutherford Backscattering

Analysis of MBE Grown Al sub (x) Ga sub (1-x) As-GaAs Heteroepitaxial Layers by Rutherford Backscattering

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The Rutherford Backscattering (RBS) technique has been optimized for the measurement of then (>= 85angstroms) alternating layers of Al sub (x) Ga sub (1-x) As and GaAs, which are at the linit of resolution of standard RBS measurements. RBS analysis of these structures provides both layer thicknesses and Al content. This information is useful for device processing since the layer thicknesses impact the FET threshold voltage and the Al content is important for proper chemical etching.