B.S.T.J. Briefs: Experimental Verification of the Charge Coupled DeviceConcept

The authors wish to thank D. Kahng, C. N. Berglund and E. I. Gordon for stimulating discussions during the course of this work. REFERENCES 1. Heiman, F. P., "On the Determination of Minority Carrier Lifetime from the Transient Response of an MOS Capacitor," IEEE Trans, on Electron Devices, ED-U, No. 11 (November 1967), pp. 781-784. 2. Hofstein, S. R., "Minority Carrier Lifetime Determination from Inversion Layer Transient Response," IEEE Trans, on Electron Devices, ED-14, No. 11 (November 1967), pp. 785-786. 3. Buck, T. M., Casey, H. C., Jr., Dalton, J. V., and Yamin, M., "Influence of Bulk and Surface Properties on Image Sensing Silicon Diode Arrays," B.S.T.J., Jft, No. 9 (November 1968), pp. 1827-1854. 4. Goetzberger, A., and Nicollian, E. H., Appl. Phys. Lett. 9, No. 12 (December 1966), pp. 444-446. 5. Gordon, E. I., private communication. 6. Amelio, G. F., Tompsett, M. F., and Smith, G. E., "Experimental Verification of the Charge Coupled Device Concept," B.S.T.J., this issue, pp. 593-600.