Electroreflectance Spectroscopy of Si/Ge(x)Si(1-x) Quantum Well Structures.
01 January 1986
Electro-reflectance spectroscopy of Ge(x)Si(1-x) decoupled multiple quantum-well structures grown by MBE has been used to yield confinement energy and strain shifts for the E(0)) and E(1) optical transitions. The strain induced by lattice mismatch decouples the valence band at the zone center permitting resolution of the strain split E(0) valence band states. Confinement of electrons and holes in quantum well states has an additional important effect on the optical transition energies for narrow (