Electrothermal effects in InP DHBT integrated current mirrors
17 September 2010
A method based on measurement and simulation of current mirrors is proposed to investigate electro-thermal effects in InP-DHBT integrated circuits. Various current mirror configurations are realized and measured to study the impact of transistor sizes and spacing on thermal effects. A electro-thermal model is proposed. It is based on the UCSD HBT model equations and includes an external thermal node for connection of a thermal coupling network. Simulations results agree well with the measurements ones.