Enhancement and depletion-mode p-Channel Ge(x)Si(1-x) modulation- doped FETs.
01 January 1986
We report enhancement and depletion mode modulation-doped FETs in Si. MBE grown Si/Ge(x)Si(1-x) heterostructures were produced with 1-dimensional confinement of holes at the heterostructure interface. Transconductances of 2.5 mS/mm and 3.2 mS/mm were measured at 300K for enhancement and depletion-mode devices, respectively in good agreement with transistor modeling predictions for p-channel devices using measured material parameters.