Enhancement mode InP MISFET's grown by chemical beam epitaxy.

We have fabricated enhancement mode InP MIS field effect transistors having extrinsic transconductances of 64 mS/mm for a gate length of 2micron. The epitaxial layers for the structure have been grown by chemical beam epitaxy. The FET's exhibit effective mobilities of 1235 cm(2)/Vs and an average drift velocity of 1.12 x 10(7) cm/s. These results are in good agreement with state-of-the-art InP MISFET technology.