Ensemble Monte Carlo Simulations of Semiconductor Devices

The ensemble Monte Carlo method consists of tracing a large number of particles stepwise in time, in the real and momentum space, reflecting microscopic transport behavior. This method when applied to semiconductor devices requires three constituents. A realistic device geometry, an accurate crystal environments (band structure) and impurities. The ensemble Monte Carlo model which will be described here incorporates a complete GAMMA-L-X band structure for both GaAs and AlGaAs.