Epitaxial Hg(1-x)Cd(x)Te growth by low temperature MOCVD.

We report the first low temperature MOCVD growth of Hg(1-x)Cd (x)Te using a thermal pre-cracking technique. The pre-cracking technique enables one to grow epitaxial Hg(1-x)Cd(x)Te on CdTe substrates at temperatures as low as 250C. The growth rate is 1 to 2 microns per hour. The single crystalline film is epitaxial and has good morphology. The Hg(1-x)Cd(x)Te epilayer also shows IR transmission with sharp cut-off edges. The material at x=0.3 is n-type and has a room temperature mobility of 12,200 cm(2)/V-sec with carrier concentration of 2.7x10(17)/cm(3) and 77 K mobility of 27,000 cm/(2)/V-sec with carrier concentration of 1.0x10(17)/cm(3). These are the highest mobilities ever reported at this composition.