Epitaxial Yttrium silicide on (111) silicon by vacuum annealing.

Epitaxial YSi sub (2-x) films have been fabricated. The smooth 515angstrom thick silicide films on Si(111) substrates were characterized by a Rutherford backscattering minimum channeling yield, chi sub (min) = 8%, establishing YSi sub (2-x) as one of the best known epitaxial silicides. Results of electrical measurements are also presented.