Er-Doped GaN Grown by Molecular Beam Epitaxy

GaN films doped with Er were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular molecular beam epitaxy (MBE). The incorporation of Er into the GaN films was achieved in-situ by the use of an effusion cell. The incorporation of Er was found to be in the range of 6x10sup17 to 2x10sup20 cmsup-3 corresponding to Er cell temperatures in the range from 900 to 1000 degC. The highest incorporation level that has been observed was 1x10sup21 cmsup-3. Luminescence in the visible (414, 538, 559, and 667 nm) and near-infrared (1.00, 1.51, 1.54 and 1.55 mum) spectral regions was obtained at room temperature by electrical excitation.