Etching of deep groves for the precise positioning of cleaves in semiconductor lasers.
01 January 1985
Photoelectrochemical etching of InP is used to etch deep (80microns) narrow (20microns) grooves. The grooves are used to precisely position cleaves in semiconductor lasers and to demonstrate the first wafer processing of long/short cleaved-coupled-cavity (C(3)) lasers. Large numbers of low threshold C(3) lasers with very similar cavity lengths were obtained.