ETCHING OF DEEP V-GROOVE CHANNELS ON A (001) INP SUBSTRATE AND REGROWTH BY GAS SOURCE MOLECULAR BEAM EPITAXY
10 January 1996
We have investigated the regrowth of InP by gas source molecular beam epitaxy on patterned substrates with different V-grooved channels. The etching process has been adapted for deep V-grooves with narrow channels on (001) InP substrates. Three kinds of etch profiles which exhibit [lcub]111[rcub]B, [lcub]111[rcub]A and [lcub]112[rcub]A facets have been obtained. The regrown InP shows different planation effects depending on the facets of the V-groove. Planation effects are enhanced for B-type facets whereas the profile is left unchanged for A-type facets.