Evaluation of Large Diameter InP Substrate Material
01 January 1989
Expanding interest in large-scale fabrication of electronic and photonic devices and in the scale-up of epitaxial growth reactors is creating the need for high quality large diameter InP substrate material. This paper will discuss the evaluation of three-inch diameter semi-insulating Fe-doped InP substrate material purchased from two commercial suppliers. The results of Photon Back Scatter, Infrared Transmission Microscopy, Hall Effect, and Spatially Resolved Photoluminescence measurements will be presented and evaluated.