Evaluation of silicon films as a diffusion mask and encapsulant for InP and GaAs.

We have determined that silicon films have nearly ideal properties for use as a diffusion mask and encapsulation coating for InP and GaAs. The Si films, composed of a single element, are easily and reproducibly deposited by electron beam evaporation at low temperatures. Finally, we found that the Si film acts as a good diffusion mask for Zn which is a common p-type impurity for forming p-n junctions in III-V compounds.