Evidence of RTS noise in emitter-base periphery of InP/GaAsSb/InP HBT
01 January 2008
This paper presents low frequency noise (LF) measurements on InP/GaAsSb/InP HBTs. The spectral analysis of the dominant base noise source SIb has allowed to identify the 1/f noise and a RTS noise component. From LF noise measurements as a function of the temperature, the parameters of the traps responsible for the RTS noise signature have been extracted. An activation energy close to 200 eV with a capture cross-section near 1times10-18 cm2 have been determined.